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1 MRF9135L MRF9135Lr3 MRF9135Lsr3 motorola rf device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequencies from 865 to 895 mhz. the high gain and broadband performance of these devices make them ideal fo r large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical n?cdma performance @ 880 mhz, 26 volts, i dq = 1100 ma is?95 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 25 watts avg. power gain ? 17.8 db efficiency ? 25% adjacent channel power ? 750 khz: ?47 dbc @ 30 khz bw ? internally matched, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 135 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs +15, ?0.5 vdc total device dissipation @ t c > = 25 c derate above 25 c p d 298 1.7 watts w/ c storage temperature range t stg ?65 to +200 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model c7 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.6 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF9135L/d semiconductor technical data 880 mhz, 135 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 MRF9135L case 465a?06, style 1 ni?780s MRF9135Lsr3 ? motorola, inc. 2002 rev 1
MRF9135L MRF9135Lr3 MRF9135Lsr3 2 motorola rf device data electrical characteristics (t c = 25 c, 50 ohm system unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 450 a) v gs(th) 2 2.8 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 1100 madc) v gs(q) 3 3.7 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 9 adc) g fs ? 12 ? s dynamic characteristics output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 109 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.4 ? pf functional tests (in motorola test fixture) single?carrier n?cdma, 1.2288 mhz channel bandwidth carrier, peak/avg. ratio = 9.8 db @ 0.01% probability on ccdf common?source amplifier power gain (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 880.0 mhz) g ps 16 17.8 ? db drain efficiency (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 880.0 mhz) 22 25 ? % adjacent channel power ratio (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 880.0 mhz; acpr @ 25 w, 1.23 mhz bandwidth, 750 khz channel spacing) acpr ? ?47 ?45 dbc input return loss (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 880.0 mhz) irl ? ?13.5 ?9 db common?source amplifier power gain (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 865 mhz and 895 mhz) g ps ? 17 ? db drain efficiency (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 865 mhz and 895 mhz) ? 24 ? % adjacent channel power ratio (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 865 mhz and 895 mhz; acpr @ 25 w, 1.23 mhz bandwidth, 750 khz channel spacing) acpr ? ?46 ? dbc input return loss (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 865 mhz and 895 mhz) irl ? ?12.5 ? db output mismatch stress (v dd = 26 vdc, p out = 135 w cw, i dq = 1100 ma, f = 880.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power
3 MRF9135L MRF9135Lr3 MRF9135Lsr3 motorola rf device data figure 1. 880 mhz test circuit schematic z1 0.430 x 0.080 microstrip z2 0.430 x 0.080 microstrip z3 0.800 x 0.080 microstrip z4 0.200 x 0.220 microstrip z5 0.110 x 0.220 microstrip z6 0.175 x 0.220 microstrip z7 0.200 x 0.220 x 0.630 taper z8 0.250 x 0.630 microstrip z9 0.050 x 0.630 microstrip z10 0.050 x 0.630 microstrip z11 0.105 x 0.630 microstrip z12 0.145 x 0.630 microstrip z13 0.200 x 0.630 x 0.220 taper z14 0.180 x 0.220 microstrip z15 0.110 x 0.220 microstrip z16 0.200 x 0.220 microstrip z17 0.900 x 0.080 microstrip z18 0.360 x 0.080 microstrip z19 0.410 x 0.080 microstrip table 1. 880 mhz test circuit component designations and values part description value, p/n or dwg manufacturer b1, b2 short ferrite beads, surface mount 95f786 newark c1, c7, c17, c18 47 pf chip capacitors, b case 100b470jp 500x atc c2, c16 0.6?4.5 gigatrim variable capacitors 44f3360 newark c3 8.2 pf chip capacitor, b case 100b8r2bp 500x atc c4, c15 0.8?8.0 gigatrim variable capacitors 44f3360 newark c5, c6 12 pf chip capacitors, b case 100b120jp 500x atc c8 20k pf chip capacitor, b case 200b203mp50x atc c9, c20, c21, c22 10 f, 35 v tantulum capacitors 93f2975 newark c10, c11, c12, c13 7.5 pf chip capacitors, b case 100b7r5jp 500x atc c14 11 pf chip capacitor, b case 100b110jp 500x atc c19 0.56 f, 50 v chip capacitor c1825c564k5ra7800 kemet c23 470 f electrolytic capacitor 14f185 newark l1, l2 12.5 nh coilcraft inductors a04t?5 coilcraft wb1, wb2 10 mil brass shim (0.205 x 0.530) rf?design lab rf?design lab pcb etched circuit board 900 mhz 4x6 cobra rev 02 cmr bedstead circuit bedstead dwg #990528jam2 rf?design lab board material 30 mil glass teflon ? , r = 2.55, 2 oz cu gx?0300?55?22 arlon
MRF9135L MRF9135Lr3 MRF9135Lsr3 4 motorola rf device data figure 2. 880 mhz test circuit component layout cut out area 900 mhz MRF9135L
5 MRF9135L MRF9135Lr3 MRF9135Lsr3 motorola rf device data typical characteristics figure 3. class ab broadband circuit performance figure 4. power gain versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain and efficiency versus output power
MRF9135L MRF9135Lr3 MRF9135Lsr3 6 motorola rf device data figure 8. power gain, efficiency and imd versus output power figure 9. n?cdma performance output power versus gain, acpr, efficiency figure 10. typical cdma spectrum
7 MRF9135L MRF9135Lr3 MRF9135Lsr3 motorola rf device data f mhz z in ? z ol * ? 865 880 895 1.15 ? j0.3 1.35 ? j0.75 1.25 ? j0.5 1.17 + j0.24 1.22 + j0.1 1.32 + j0.07 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. figure 11. series equivalent input and output impedance ?
MRF9135L MRF9135Lr3 MRF9135Lsr3 8 motorola rf device data notes
9 MRF9135L MRF9135Lr3 MRF9135Lsr3 motorola rf device data notes
MRF9135L MRF9135Lr3 MRF9135Lsr3 10 motorola rf device data notes
11 MRF9135L MRF9135Lr3 MRF9135Lsr3 motorola rf device data package dimensions case 465?06 issue f ni?780 MRF9135L

d g k c e h s f q 2x b b (flange)

aa (flange) t n (lid) m (insulator) (insulator) r (lid) case 465a?06 issue f ni?780s MRF9135Lsr3

d k c e h f u (flange) 4x z (lid) 4x
b b (flange) 2x

a a (flange) t n (lid) m (insulator) r (lid) s (insulator)
MRF9135L MRF9135Lr3 MRF9135Lsr3 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation, or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? param eters can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for e ach customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola p roducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purch ase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employe es, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent reg arding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent & trademark office. all other product or service names are the property of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1?303?675?2140 or 1?800?441?2447 japan : motorola japan ltd.; sps, technical information center, 3?20?1, minami?az abu. minato?ku, tokyo 106?8573 japan. 8 1?3?3440?3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t. hong kon g. 852?26668334 technical information center: 1?800?521?6274 home page : http://www .motorola.com/semiconductors/ MRF9135L/d ?

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